AO4922
FET2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
VDS=15V
4
ID=7.3A
3
2
1
0
0
2
4
6
8
10
12
Qg (nC)
Figure 7: Gate-Charge Characteristics
1400
1200
1000
Ciss
800
600
400
Crss
200
Coss
0
0
5
10
15
20
25
30
VDS (Volts)
Figure 8: Capacitance Characteristics
100.00
10µs
10.00
RDS(ON)
limited
1.00
10s
0.10
TJ(Max)=150°C
TA=25°C
100µs
1ms
1s
DC
0.01
0.01
0.1
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
50
TJ(Max)=150°C
40
TA=25°C
30
20
10
0
0.0001 0.001 0.01 0.1
1
10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIEDD=FTOon/RT THE CONSUMER MARKETP. ADPPLICATIONS OR USES AS CRITICAL
COMPONEN0.T0S1 IN LIFE SUPPORT DEVICES OR SYSTETJM,PSK=ATRA+EPNDMO.ZTθJAAU.RTθHJAORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES
FUNCTIONS AND RELIABILSITinYgWle IPTuHlsOeUT
OF ITS PRODRUθJCA=T6S2..5A°CO/SWRESERVES
NOTICE.
THE
RIGHT
TTOonIMPROVE
T
PRODUCT
DESIGN,
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Alpha & Omega Semiconductor, Ltd.