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AO4922 View Datasheet(PDF) - Alpha and Omega Semiconductor

Part Name
Description
MFG CO.
AO4922
AOSMD
Alpha and Omega Semiconductor AOSMD
'AO4922' PDF : 8 Pages View PDF
1 2 3 4 5 6 7 8
AO4922
FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01
1.0E-02
1.0E-03
1.0E-04
VDS=24V
VDS=12V
1.0E-05
1.0E-06
0
50
100
150
200
Temperature (°C)
DYNAMIC PAFRigAurMe 1E2T: EDRiodSe Reverse Leakage Current vs.
Junction Temperature
25
8
di/dt=800A/us
125ºC
20
6
15 Qrr
25ºC
125ºC
4
10 Irm
25ºC
2
5
0
0
0
5
10 15 20 25 30
Is (A)
Figure 14: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
1
0.9
0.8
20A
0.7
0.6
0.5
10A
0.4
5A
0.3
0.2
0.1
IS=1A
0
0
50
100
150
200
Temperature (°C)
Figure 13: Diode Forward voltage vs. Junction
Temperature
15
2.5
di/dt=800A/us
12
125ºC
2
9
trr
6
S
3
1.5
25ºC
1
25º
0.5
125ºC
0
0
0
5
10
15
20
25
30
Is (A)
Figure 15: Diode Reverse Recovery Time and Soft
Coefficient vs. Conduction Current
25
10
125ºC 9
20
8
Is=20A
25ºC 7
15
6
5
10
125º
4
5
Qrr
3
25ºC
2
1
0
Irm
0
0
200 400 600 800 1000
di/dt (A)
Figure 16: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
18
15 125ºC
12 25ºC
3
Is=20A
2.5
2
9
6
25ºC
trr
1.5
1
3
125ºC
S
0.5
0
0
0
200
400
600
800 1000
di/dt (A)
Figure 17: Diode Reverse Recovery Time and Soft
Coefficient vs. di/dt
Alpha & Omega Semiconductor, Ltd.
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