AO4922
FET2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
10V
50
40
30
20
4.5V
3V
2.5V
10
VGS=2V
0
0
1
2
3
4
5
VDS (Volts)
Figure 1: On-Region Characteristics
20
16
VDS=5V
12
125°C
8
25°C
4
0
0
0.5
1
1.5
2
2.5
3
VGS(Volts)
Figure 2: Transfer Characteristics
30
1.8
VGS=4.5V
25
ID=6A
1.5
VGS=4.5V
1.2
20
VGS=10V
0.9
VGS=10V
ID=7.3A
15
0
5
10
15
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
0.6
-50 -25 0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
60
1.0E+01
55
1.0E+00
50
45
ID=7.3A
1.0E-01
125°C
40
1.0E-02
35
125°C
30
1.0E-03
THIS PR2O5DUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONS1U.0ME-E0R4 MARKET. APPLICATION2S5O°CR USES AS CRITICAL
COMPO2N0ENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR US2E5S°COF ITS PRODUCTS. AOS RES1E.0REV-E05S THE RIGHT TO IMPROVE PRODUCT DESIGN,
15
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
10
1.0E-06
0
2
4
6
8
10
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
VSD (Volts)
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.