AP30N30WI View Datasheet(PDF) - Advanced Power Electronics Corp
Part Name
Description
MFG CO.
'AP30N30WI' PDF : 4 Pages View PDF
Advanced Power
Electronics Corp.
AP30N30WI
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
D
▼ Simple Drive Requirement
▼ Lower On-resistance
▼ RoHS Compliant
G
S
Description
AP30N30 from APEC provide the designer with the best combination
of fast switching , low on-resistance and cost-effectiveness .
The TO-3PF fullpack eliminates the need for additional insulating
hardware in commercial-industrial applications.
BVDSS
RDS(ON)
ID
250V
68mΩ
30A
G
D
S
TO-3PF
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
IDM
PD@TC=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
EAS
IAR
TSTG
TJ
Single Pulse Avalanche Energy3
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Rating
250
±30
30
120
83
0.7
450
30
-55 to 150
-55 to 150
Units
V
V
A
A
W
W/℃
mJ
A
℃
℃
Max.
Max.
Value
1.5
42
Units
℃/W
℃/W
Data and specifications subject to change without notice
201216053-1/4
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