ATA6612C View Datasheet(PDF) - Atmel Corporation
Part Name
Description
MFG CO.
ATA6612C
Atmel Corporation
'ATA6612C' PDF : 312 Pages View PDF
4. Electrical Characteristics (Continued)
5V < VS < 27V, –40°C < Tcase < 125°C, –40°C < Tj < 150°C, unless otherwise specified. All values refer to GND pins
No. Parameters
Test Conditions
Pin Symbol Min.
Typ. Max. Unit
8.8
8.9
8.10
8.11
LIN current limitation
VBUS = VBatt_max
Input leakage current at Input leakage current
the receiver including Driver off
pull-up resistor as
specified
VBUS = 0V
VBatt = 12V
Driver off
Leakage current LIN
recessive
8V < VBatt < 18V
8V < VBUS < 18V
VBUS ≥ VBatt
Leakage current when
control unit
disconnected from
ground.
Loss of local ground
must not affect
GNDDevice = VS
VBatt = 12V
0V < VBUS < 18V
communication in the
residual network.
LIN
IBUS_LIM
40
LIN
IBUS_PAS_do
–1
m
120
200
mA
–0.35
mA
LIN
IBUS_PAS_re
c
10
20
µA
LIN
IBUS_NO_gn
–10
d
+0.5
+10
µA
8.12
Leakage current at a
disconnected battery.
Node has to sustain the
current that can flow
under this condition.
Bus must remain
VBatt disconnected
VSUP_Device = GND
0V < VBUS < 18V
operational under this
condition.
LIN
IBUS_NO_bat
0.1
2
µA
9 LIN Bus Receiver
9.1
Center of receiver
threshold
VBUS_CNT =
(Vth_dom + Vth_rec)/2
9.2 Receiver dominant state VEN = 5V
9.3
Receiver recessive
state
VEN = 5V
LIN
VBUS_CNT
0.475 ×
VS
0.5 ×
VS
0.525 ×
VS
V
LIN
VBUSdom
0.4 × VS V
LIN
VBUSrec 0.6 × VS
V
9.4
Receiver input
hysteresis
Vhys = Vth_rec – Vth_dom
9.5
Pre_Wake detection LIN
High-level input voltage
LIN
VBUShys
0.028 ×
VS
0.1 × VS
0.175 ×
VS
V
LIN
VLINH
VS – 2V
VS +
0.3V
V
9.6
Pre_Wake detection LIN
Low-level input voltage
Activates
the LIN
receiver
LIN
VLINL
–27
VS –
3.3V
V
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Type*
A
A
A
A
A
A
A
A
A
A
A
22 ATA6612C/ATA6613C [DATASHEET]
9111L–AUTO–11/14
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