NXP Semiconductors
BLF369
Multi-use VHF power LDMOS transistor
10. Abbreviations
Table 9. Abbreviations
Acronym
Description
CW
Continuous Wave
DC
Direct Current
GSM
Global System for Mobile communications
HF
High Frequency
LDMOS
Laterally Diffused Metal Oxide Semiconductor
LDMOST
Laterally Diffused Metal-Oxide Semiconductor Transistor
PEP
Peak Envelope Power
RF
Radio Frequency
TTF
Time To Failure
UHF
Ultra High Frequency
VHF
Very High Frequency
VSWR
Voltage Standing Wave Ratio
11. Revision history
Table 10. Revision history
Document ID
Release date Data sheet status
Change notice
BLF369_3
20080129
Preliminary data sheet
-
Modifications:
• Information for pulsed conditions has been added.
BLF369_2
20061208
Objective data sheet
-
BLF369_1
20060413
Objective data sheet
-
Supersedes
BLF369_2
BLF369_1
-
BLF369_3
Preliminary data sheet
Rev. 03 — 29 January 2008
© NXP B.V. 2008. All rights reserved.
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