C8051F901-GD View Datasheet(PDF) - Silicon Laboratories
Part Name
Description
MFG CO.
C8051F901-GD
Silicon Laboratories
'C8051F901-GD' PDF : 318 Pages View PDF
C8051F91x-C8051F90x
Table 4.5. Power Management Electrical Specifications
VDD = 1.8 to 3.6 V, –40 to +85 °C unless otherwise specified.
Parameter
Idle Mode Wake-up Time
Conditions
Min Typ
2
—
Suspend Mode Wake-up Time
Low power oscillator
—
400
Precision oscillator
—
400
Sleep Mode Wake-up Time
Two-cell mode
—
2
One-cell mode
—
10
Max
Units
3 SYSCLKs
—
ns
—
ns
—
µs
—
µs
Table 4.6. Flash Electrical Characteristics
VDD = 1.8 to 3.6 V, –40 to +85 °C unless otherwise specified.
Parameter
Flash Size
Conditions
C8051F912/1
C8051F902/1
Scratchpad Size
Min
Typ
16384* —
8192
—
512
—
Endurance
1k
90 k
Erase Cycle Time
28
32
Write Cycle Time
57
64
*Note: On 16 kB devices, 1024 bytes at addresses 0x3C00 to 0x3FFF are reserved.
Max
—
—
512
—
36
71
Units
bytes
bytes
bytes
Erase/Write
Cycles
ms
µs
Table 4.7. Internal Precision Oscillator Electrical Characteristics
VDD = 1.8 to 3.6 V; TA = –40 to +85 °C unless otherwise specified; Using factory-calibrated settings.
Parameter
Conditions
Min
Oscillator Frequency
Oscillator Supply Current
(from VDD)
–40 to +85 °C,
24
VDD = 1.8–3.6 V
25 °C; includes bias current —
of 90–100 µA
*Note: Does not include clock divider or clock tree supply current.
Typ
24.5
300*
Max
25
—
Units
MHz
µA
Table 4.8. Internal Low-Power Oscillator Electrical Characteristics
VDD = 1.8 to 3.6 V; TA = –40 to +85 °C unless otherwise specified; Using factory-calibrated settings.
Parameter
Conditions
Min
Typ
Max
Oscillator Frequency
–40 to +85 °C,
VDD = 1.8–3.6 V
18
20
22
Oscillator Supply Current
25 °C
(from VDD)
No separate bias current
—
100*
—
required.
*Note: Does not include clock divider or clock tree supply current.
Units
MHz
µA
Rev. 1.0
53
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