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C8051F901-GD View Datasheet(PDF) - Silicon Laboratories

Part Name
Description
MFG CO.
'C8051F901-GD' PDF : 318 Pages View PDF
C8051F91x-C8051F90x
Table 4.13. IREF0 Electrical Characteristics
VDD = 1.8 to 3.6 V, 40 to +85 °C, unless otherwise specified.
Parameter
Static Performance
Resolution1
Conditions
Min
Typ
Max
6
Output Compliance Range
Integral Nonlinearity
Low Power Mode, Source
High Current Mode, Source
Low Power Mode, Sink
High Current Mode, Sink
0
VDD – 0.4
0
VDD – 0.8
0.3
VDD
0.8
VDD
<±0.2
±1.0
Differential Nonlinearity
<±0.2
±1.0
Offset Error
<±0.1
±0.5
Low Power Mode, Source
±5
Full Scale Error2
High Current Mode, Source
±6
Low Power Mode, Sink
±8
High Current Mode, Sink
±8
Absolute Current Error
Low Power Mode
Sourcing 20 µA
<±1
±3
Dynamic Performance
Output Settling Time to 1/2 LSB
300
Startup Time
1
Power Consumption
Net Power Supply Current
Low Power Mode, Source
(VDD supplied to IREF0 minus any
output source current)
IREF0DAT = 000001
10
IREF0DAT = 111111
10
High Current Mode, Source
IREF0DAT = 000001
10
IREF0DAT = 111111
10
Low Power Mode, Sink
IREF0DAT = 000001
1
IREF0DAT = 111111
11
High Current Mode, Sink
IREF0DAT = 000001
12
IREF0DAT = 111111
81
Notes:
1. Refer to “PWM Enhanced Mode” on page 86 for information on how to improve IREF0 resolution.
2. Full scale is 63 µA in Low Power Mode and 504 µA in High Power Mode.
Units
bits
V
LSB
LSB
LSB
%
%
%
%
%
ns
µs
µA
µA
µA
µA
µA
µA
µA
µA
Rev. 1.0
57
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