L/31ROPT1C View Datasheet(PDF) - Para Light Electronics
Part Name
Description
MFG CO.
'L/31ROPT1C' PDF : 12 Pages View PDF
3.0mm PHOTOTRANSISTOR
L-31ROPT1C
REV:A / 3
FEATURES
* WIDE RANGE COLLECTOR CURRENTS
* LENSED FOR HIGH SENSITIVITY
* HIGH-OUTPUT POWER
* HIGH-SPEED RESPONSE
* Pb FREE PRODUCTS
CHIP MATERIALS
* SILICON
ABSOLUTE MAXIMUM RATING : ( Ta = 25°C )
SYMBOL
PARAMETER
PD
Power Dissipation
V(BR)CEO Collector-Emitter Breakdown Voltage
Topr
Operating Temperature Range
Tstg
Storage Temperature Range
MAX
UNIT
10
mW
30
V
-25°C to 85°C
-25°C to 85°C
ELECTRO-OPTICAL CHARACTERISTICS : ( Ta = 25°C )
SYMBOL
PARAMETER
TEST
MIN TYP MAX UNIT
CONDITION
Ic = 100µA
BVCEO Collector-Emitter Breakdown Voltage
Ee = 0 mw/cm2 30
V
BVECO
ICEO
VCE(S)
TR/TF
IC
Emitter-Collector Breakdown Voltage
Collector Dark Current
Collector-Emitter Saturation Voltage
Rise / Fall Time
On Stat Collector Current
IE=100µA
Ee= 0 mw/cm2 5
V
VCE=10V
Ee=0 mw/cm2
100 nA
IC=2mA
Ee=0.5 mw/cm2
0.4 V
VCE=5V
IC=1mA
RL=1000Ω
15/15
uS
VCE=5V
Ee=0.1 mw/cm2
4
mA
λP
Wavelength of Peak Sensitivity
940
nm
DRAWING NO. : DS-21-02-0002
DATE : 2006-04-03
Page : 3
HD-R/RD014
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