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LH28F320BFHE-PBTLZ2 View Datasheet(PDF) - Sharp Electronics

Part Name
Description
MFG CO.
LH28F320BFHE-PBTLZ2
Sharp
Sharp Electronics Sharp
'LH28F320BFHE-PBTLZ2' PDF : 36 Pages View PDF
LHF32FD2
28
1.2.7 Block Erase, Full Chip Erase, (Page Buffer) Program and OTP Program Performance(3)
VCC=2.7V-3.6V, TA=-40°C to +85°C
Symbol
Parameter
tWPB
4K-Word Parameter Block
Program Time
tWMB
32K-Word Main Block
Program Time
tWHQV1/
tEHQV1
tWHOV1/
tEHOV1
tWHQV2/
tEHQV2
tWHQV3/
tEHQV3
tWHRH1/
tEHRH1
tWHRH2/
tEHRH2
tERES
Word Program Time
OTP Program Time
4K-Word Parameter Block
Erase Time
32K-Word Main Block
Erase Time
Full Chip Erase Time
(Page Buffer) Program Suspend
Latency Time to Read
Block Erase Suspend
Latency Time to Read
Latency Time from Block Erase
Resume Command to Block
Erase Suspend Command
Page Buffer
Notes
Command is
Used or not
Used
VPP=VPPH1
(In System)
Min. Typ.(1) Max.(2)
VPP=VPPH2
(In Manufacturing) Unit
Min. Typ.(1) Max.(2)
2 Not Used
0.05 0.3
0.04 0.12 s
2
Used
0.03 0.12
0.02 0.06 s
2 Not Used
0.38 2.4
0.31 1.0 s
2
Used
0.24 1.0
0.17 0.5 s
2 Not Used
11 200
9 185 µs
2
Used
7 100
5 90 µs
2 Not Used
36 400
27 185 µs
2
-
0.3 4
0.2 4 s
2
-
2
4
-
0.6 5
40 350
5 10
0.5 5 s
33 350 s
5 10 µs
4
-
5 20
5 20 µs
5
-
500
500
µs
NOTES:
1. Typical values measured at VCC=3.0V, VPP=3.0V or 12V, and TA=+25°C. Assumes corresponding lock bits
are not set. Subject to change based on device characterization.
2. Excludes external system-level overhead.
3. Sampled, but not 100% tested.
4. A latency time is required from writing suspend command (WE# or CE# going high) until SR.7 going "1".
5. If the interval time from a Block Erase Resume command to a subsequent Block Erase Suspend command is shorter
than tERES and its sequence is repeated, the block erase operation may not be finished.
Rev. 2.44
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