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LHF16KA7 View Datasheet(PDF) - Sharp Electronics

Part Name
Description
MFG CO.
LHF16KA7
Sharp
Sharp Electronics Sharp
'LHF16KA7' PDF : 53 Pages View PDF
SHARI=
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LHFlGKA7
14
.i
1.5.4 Device Geometry Definition
rhis field provides critical details of the flash device geometry.
Offset
(Word Address)
27H
28H,29H
2AH,2BH
2CH
2DH,2EH
\
2FH,30H
Length
OlH
02H
02H
01H
02H
02H
Table 10. Device Geometry Definition
Description
Device Size
15H (15H=21,221=20971 52=2M Bytes)
Flash Device Interface description
02H,OOH (x8/x16 supports x8 and xl 6 via BYTE#)
Maximum Number of Bytes in Multi word/byte write
05H,OOH (2s=32 Bytes )
Number of Erase Block Regions within device
01 H (symmetrically blocked)
The Number of Erase Blocks
1FH,OOH (1 FH=31 ==> 31+1=32 Blocks)
The Number of “256 Bytes” cluster in a Erase block
, OOH,OlH (OlOOH=256 ==>256 Bytes x 256= 64K Bytes in a Erase Block)
1.5.5 SCS OEM Specific Extended Query Table
Zertain flash features and commands may be optional in a vendor-specific algorithm specification. The optional
rendor-specific Query table(s) may be used to specify this and other types of information. These structures are
defined solely by the flash vendor(s).
Offset
(Word Address)
31 H,32H,33H
38H,39H ”
3AH
3BH,3CH
3DH
3EH
3FH
Tat e 11. SCS OEM Specific Extended Query Table
Length
Description
03H
OlH
OlH
04H
OlH
02H
OlH
OlH
reserved
PRI
50H,52H,49H
31 H (1) Major Version Number , ASCII
30H (0) Minor Version Number, ASCII
OFH,OOH,OOH,OOH
Optional Command Support
bitO=l : Chip Erase Supported
bit1 =l : Suspend Erase Supported
bit2=1 : Suspend Write Supported
bit3=1 : Lock/Unlock Supported
bit4=0 : Queued Erase Not Supported
bit531 =O : reserved for-future use
OlH
Supported Functions after Suspend
bitO=l : Write Supported after Erase Suspend
bit1 -7=O : reserved for future use
03H,OOH
Block Status Register Mask
bitO=l : Block Status Register Lock Bit [BSR.O] active
bitl=l : Block Status Register Valid Bit [BSR.l] active
bit2-15=0 : reserved for future use
V,, Logic Supply Optimum Write/Erase voltage(highest performance)
50H@.OV)
Vpp Programming Supply Optimum Write/Erase voltage(highest performance)
56i-l(5.OV)
deserved for future versions of the SCS Specification
Rev. 1.9
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