LHF16KA7 View Datasheet(PDF) - Sharp Electronics
Part Name
Description
MFG CO.
'LHF16KA7' PDF : 53 Pages View PDF
SHARP
LHFlGKA7
39
6.2.5 AC CHARACTERISTICS - WRITE OPERATIONS(‘)
NOTE:
See 3.3V Vcc WE#-Controlled Writes for notes 1 through 5.
Sym. I
Vcc:=3.3V+0.3V, T,=40”C to +85”C
Versions@)
1 LH28F160S3H-Ll OO
Parameter
1 Notes ) Min. ) Max.
Unit
twclr,, Write Recovery before Read
0
ns
Vpp Hold from Valid SRD, STS High Z
2,4
0
ns
WP# VI,, Hold from Valid SRD, STS High Z
z4
0
ns
NOTES:
1. Read timing characteristics during block erase, full chip erase, (multi) wrod/byte write and block lock-bit
configuration operations are the same as during read-only operations. Refer to AC Characteristics for read-only
operations.
2. Sampled, not 100% tested.
3. Refer to Table 4 for valid A,,,, and D,, for block erase, full chip erase, (multi) word/byte write or block lock-bit
configuration.
4. Vpp should be held at V,PH1,2j3 until determination of block erase, full chip erase, (multi) word/byte write or
block lock-bit configuration success (SR.1/3/4/5=0).
5. See Ordering Information for device speeds (valid operational combinations).
Rev. 1.9
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