SHAl?I=
_-
LHFlGKA7
--
Voc=3.3V+0.3V, T,,=-40°C to +85”C
Vp,=3.0V-3.6V
vpp=4.5v-5.5v
Sym.
tw,,ov,
tF,,,,,,,
Parameter
Word/Byte Write Time
(using W/B write, in word mode)
Notes Typ.(‘) 1I Max.
Typ.(‘) 1 Max.
I
Unit
2
21.75
250
12.95
180
IJS
PFHQwVrl ,v,
W(uosirndg/ByWte/B Wwrriittee, Tinimbeyte mode)
W(uosirndg/BymteultiWwroitred/bTyimtee write)
2
19.51
250
12.95
180
IJS
2
5.66
250
2.7
180
P
II
, B(ulsoicnkg WWr/iBte wTrimitee, in word mode)
I r) I nvr, I a.2 1 0.43 1 4.8 1 s 1
II
II
I Block Write Time
(using W/B write, in byte mode)
I Q I 4 r)n I i5.5
L
,
I .L”
1 0.85 1 10.9 1 s
/I
II
I Block Write Time
(using multi word/byte write)
I
“.J”
-r
F
Block Erase Time
FHnV7 \
Full Chip Erase Time
2
0.55
10
0.41
10
S
17.6
320
13.1
320
S
‘wHQvs
bg
Set Block Lock-Bit Time
2
21.75
250
12.95
180
IJS
iwHQV4 Clear Block Lock-Bits Time
FHOVA
2
0.55
10
0.41
10
S
:wHnHt Write Suspend Latency Time to Read
FHRHI
7.1
10
6.6
9.3
LJS
pHnH2 Erase Suspend Latency Time to Read
FHRH7
15.2
21 .l
12.3
17.2
IJS
NOTES:
1. Typical values measured at TA=+25”C and nominal voltages. Assumes corresponding block lock-bits are not
set. Subject to change based on device characterization.
2. Excludes system-level overhead.
3. Sampled but not 100% tested.
Rev. 1.9