sharp
LHF32KZ5
6.2.6 ALTERNATIVE BE#-CONTROLLED WRITES(1)
Sym.
VCC=2.7V-3.6V, TA=0°C to +70°C
Parameter
Notes
tAVAV Write Cycle Time
tPHEL RP# High Recovery to BE# Going Low
2
tWLEL WE# Setup to BE# Going Low
tELEH BE# Pulse Width
tSHEH WP# VIH Setup to BE# Going High
2
tVPEH VPP Setup to BE# Going High
2
tAVEH Address Setup to BE# Going High
3
tDVEH Data Setup to BE# Going High
3
tEHDX Data Hold from BE# High
tEHAX Address Hold from BE# High
tEHWH WE# Hold from BE# High
tEHEL BE# Pulse Width High
tEHRL BE# High to STS Going Low
tEHGL Write Recovery before Read
tQVVL VPP Hold from Valid SRD, STS High Z
2,4
tQVSL WP# VIH Hold from Valid SRD, STS High Z
2,4
NOTE:
See 5.0V VCC Alternative BE#-Controlled Writes for notes 1 through 4.
Sym.
VCC=3.3V±0.3V, TA=0°C to +70°C
Parameter
Notes
tAVAV Write Cycle Time
tPHEL RP# High Recovery to BE# Going Low
2
tWLEL WE# Setup to BE# Going Low
tELEH BE# Pulse Width
tSHEH WP# VIH Setup to BE# Going High
2
tVPEH VPP Setup to BE# Going High
2
tAVEH Address Setup to BE# Going High
3
tDVEH Data Setup to BE# Going High
3
tEHDX Data Hold from BE# High
tEHAX Address Hold from BE# High
tEHWH WE# Hold from BE# High
tEHEL BE# Pulse Width High
tEHRL BE# High to STS Going Low
tEHGL Write Recovery before Read
tQVVL VPP Hold from Valid SRD, STS High Z
2,4
tQVSL WP# VIH Hold from Valid SRD, STS High Z
2,4
NOTE:
See 5.0V VCC Alternative BE#-Controlled Writes for notes 1 through 4.
Min.
120
1
0
70
100
100
50
50
5
5
0
25
0
0
0
Min.
100
1
0
70
100
100
50
50
5
5
0
25
0
0
0
46
Max.
Unit
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
100
ns
ns
ns
ns
Max.
Unit
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
100
ns
ns
ns
ns