NXP Semiconductors
LPC1769/68/67/66/65/64/63
32-bit ARM Cortex-M3 microcontroller
11. Dynamic characteristics
11.1 Flash memory
Table 9. Flash characteristics
Tamb = −40 °C to +85 °C, unless otherwise specified.
Symbol
Parameter
Conditions
Nendu
tret
endurance
retention time
powered
unpowered
ter
erase time
sector or multiple
consecutive sectors
tprog
programming time
Min
[1] 10000
10
20
95
[2] 0.95
Typ
Max
100000 -
-
-
-
-
100
105
1
1.05
Unit
cycles
years
years
ms
ms
[1] Number of program/erase cycles.
[2] Programming times are given for writing 256 bytes from RAM to the flash. Data must be written to the flash in blocks of 256 bytes.
11.2 External clock
Table 10. Dynamic characteristic: external clock
Tamb = −40 °C to +85 °C; VDD(3V3) over specified ranges.[1]
Symbol
Parameter
Conditions
fosc
Tcy(clk)
tCHCX
tCLCX
tCLCH
tCHCL
oscillator frequency
clock cycle time
clock HIGH time
clock LOW time
clock rise time
clock fall time
Min
1
40
Tcy(clk) × 0.4
Tcy(clk) × 0.4
-
-
Typ[2]
-
-
-
-
-
-
Max
25
1000
-
-
5
5
[1] Parameters are valid over operating temperature range unless otherwise specified.
[2] Typical ratings are not guaranteed. The values listed are at room temperature (25 °C), nominal supply voltages.
Unit
MHz
ns
ns
ns
ns
ns
tCHCL
tCLCX
tCHCX
tCLCH
Tcy(clk)
Fig 15. External clock timing (with an amplitude of at least Vi(RMS) = 200 mV)
002aaa907
LPC1769_68_67_66_65_64_63
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 7 — 5 April 2011
© NXP B.V. 2011. All rights reserved.
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