MT46V2M32 View Datasheet(PDF) - Micron Technology
Part Name
Description
MFG CO.
'MT46V2M32' PDF : 65 Pages View PDF
T0
T1
CK#
CK
COMMAND
READ
BST7
T2 T2n T3
64Mb: x32
DDR SDRAM
T4 T4n T5 T5n
NOP
WRITE
NOP
NOP
ADDRESS
Bank,
Col n
DQS
DQ
DM
CL = 2
Bank,
Col b
tDQSS
(MIN)
DO
DI
n
b
T0
CK#
CK
T1
T2
T3
T4
T5 T5n
COMMAND
READ
BST7
NOP
NOP
WRITE
NOP
ADDRESS
Bank a,
Col n
DQS
DQ
DM
CL = 3
Bank,
Col b
tDQSS
(MIN)
DO
DI
DI
n
b
b
DON’T CARE
TRANSITIONING DATA
NOTE: 1. DO n = data-out from column n.
2. DI b = data-in from column b.
3. Burst length = 4 in the cases shown (applies for bursts of 8 and full page as well; if the burst
length is 2,the BST command shown can be NOP).
4. One subsequent element of data-out appears in the programmed order following DO n.
5. Data-in elements are applied following DI b in the programmed order.
6. Shown with nominal tAC, tDQSCK, and tDQSQ.
7. BST = BURST TERMINATE command.
64Mb: x32 DDR SDRAM
2M32DDR-07.p65 – Rev. 12/01
Figure 12
READ to WRITE
22
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©2001, Micron Technology, Inc.
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