T0
T1
CK#
CK
COMMAND
WRITE
NOP
T2 T2n T3
64Mb: x32
DDR SDRAM
T4 T4n T5 T5n
NOP
WRITE
NOP
NOP
ADDRESS
DQS
DQ
DM
Bank,
Col b
tDQSS (NOM)
DI
b
Bank,
Col n
DI
n
DON T CARE
TRANSITIONING DATA
NOTE: 1. DI b, etc. = data-in for column b, etc.
2. Three subsequent elements of data-in are applied in the programmed order following DI b.
3. Three subsequent elements of data-in are applied in the programmed order following DI n.
4. An uninterrupted burst of 4 is shown.
5. Each WRITE command may be to any bank.
Figure 17
Nonconsecutive WRITE to WRITE
64Mb: x32 DDR SDRAM
2M32DDR-07.p65 – Rev. 12/01
27
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©2001, Micron Technology, Inc.