MT48H8M32LFBF-8LG View Datasheet(PDF) - Micron Technology
Part Name
Description
MFG CO.
'MT48H8M32LFBF-8LG' PDF : 71 Pages View PDF
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
Operations
Figure 23: WRITE-to-PRECHARGE
T0
CLK
tWR@ tCK ≥ 15ns
DQM
COMMAND
WRITE
T1
T2
T3
T4
t RP
NOP
PRECHARGE
NOP
NOP
T5
T6
ACTIVE
NOP
ADDRESS
BANK a,
COL n
DQ
DIN
n
BANK
(a or all)
DIN
n+1
t WR
BANK a,
ROW
tWR@ tCK < 15ns
DQM
COMMAND
WRITE
NOP
ADDRESS
BANK a,
COL n
DQ
DIN
n
DIN
n+1
t RP
NOP
PRECHARGE
NOP
NOP
BANK
(a or all)
t WR
ACTIVE
BANK a,
ROW
DON’T CARE
Note: DQM could remain LOW in this example if the WRITE burst is a fixed length of two.
Figure 24: Terminating a WRITE Burst
T0
T1
T2
CLK
COMMAND
WRITE
BURST
NEXT
TERMINATE COMMAND
ADDRESS
BANK,
COL n
(Address)
DQ
DIN
n
(Data)
Note: DQMs are LOW.
DON’T CARE
PDF:09005aef8219eeeb/Source: 09005aef8219eedd
MT48H16M16LF_2.fm - Rev F 4/07 EN
33
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