256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
Operations
Figure 31: WRITE with Auto Precharge Interrupted by a READ
T0
T1
T2
T3
T4
T5
T6
CLK
COMMAND
NOP
WRITE - AP
BANK n
NOP
READ - AP
NOP
BANK m
NOP
NOP
BANK n
Internal
States
BANK m
Page Active
WRITE with Burst of 4
Page Active
Interrupt Burst, Write-Back
tWR - BANK n
Precharge
tRP - BANK n
READ with Burst of 4
ADDRESS
DQ
BANK n,
COL a
DIN
a
DIN
a+1
BANK m,
COL d
CL = 3 (bank m)
DOUT
d
T7
NOP
tRP - BANK m
DOUT
d+1
Note: DQM is LOW.
Figure 32: WRITE with Auto Precharge Interrupted by a WRITE
T0
T1
T2
T3
CLK
T4
T5
DON’T CARE
T6
T7
COMMAND
NOP
WRITE - AP
BANK n
NOP
NOP
BANK n
Internal
States
BANK m
Page Active
WRITE with Burst of 4
Page Active
WRITE - AP
NOP
NOP
NOP
BANK m
Interrupt Burst, Write-Back Precharge
tWR - BANK n
tRP - BANK n
t WR - BANK m
WRITE with Burst of 4
Write-Back
ADDRESS
DQ
BANK n,
COL a
DIN
a
DIN
a+1
DIN
a+2
BANK m,
COL d
DIN
d
DIN
d+1
DIN
d+2
DIN
d+3
Note: DQM is LOW.
DON’T CARE
PDF:09005aef8219eeeb/Source: 09005aef8219eedd
MT48H16M16LF_2.fm - Rev F 4/07 EN
39
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