MT48LC8M32B2B5-6 View Datasheet(PDF) - Micron Technology
Part Name
Description
MFG CO.
'MT48LC8M32B2B5-6' PDF : 55 Pages View PDF
ABOLUTE MAXIMUM RATINGS
*Stresses greater than those listed may cause
permanent damage to the device. This is a stress
rating only, and functional operation of the device
at these or any other conditions above those
indicated in the operational sections of this
specification is not implied. Exposure to absolute
maximum rating conditions for extended periods
may affect reliability.
PRELIMINARY
256Mb: x32
SDRAM
Voltage on VDD, VDDQ Supply
Relative to VSS .............................................. -1V to +4.6V
Voltage on Inputs, NC or I/O Pins
Relative to VSS .............................................. -1V to +4.6V
Operating Temperature, TA ............................ 0°C to +70°C
Storage Temperature (plastic) ............ -55°C to +150°C
Power Dissipation ........................................................ 1W
Operating Temperature, TA (IT) ........... -40°C to +85°C
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(Notes: 1, 6; notes appear on page 36) (VDD, VDDQ = +3.3V ±0.3V)
PARAMETER/CONDITION
SUPPLY VOLTAGE
INPUT HIGH VOLTAGE: Logic 1; All inputs
INPUT LOW VOLTAGE: Logic 0; All inputs
INPUT LEAKAGE CURRENT:
Any input 0V ≤ VIN ≤ VDD
(All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT: DQs are disabled; 0V ≤ VOUT ≤ VDDQ
OUTPUT LEVELS:
Output High Voltage (IOUT = -4mA)
Output Low Voltage (IOUT = 4mA)
SYMBOL
VDD, VDDQ
VIH
VIL
MIN
3
2
-0.3
MAX UNITS NOTES
3.6
V
VDDQ+ 0.3 V
22
0.8
V
22
II
-5
5
µA
IOZ
-5
VOH
2.4
5
µA
–
V
VOL
–
0.4
V
09005aef80cd8e48
256MbSDRAMx32.p65 – Rev. B; Pub. 03/04
33
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc.
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