P2V28S20ATP-7 View Datasheet(PDF) - Vanguard International Semiconductor
Part Name
Description
MFG CO.
'P2V28S20ATP-7' PDF : 51 Pages View PDF
128Mb Synchronous DRAM
P2V28S20ATP-7,-75,-8 (4-BANK x 8,388,608-WORD x 4-BIT)
P2V28S30ATP-7,-75,-8 (4-BANK x 4,194,304-WORD x 8-BIT)
P2V28S40ATP-7,-75,-8 (4-BANK x 2,097,152-WORD x 16-BIT)
ABSOLUTE MAXIMUM RATINGS
Symbol
Vdd
VddQ
VI
VO
IO
Pd
Topr
Tstg
Parameter
Supply Voltage
Supply Voltage for Output
Input Voltage
Output Voltage
Output Current
Power Dissipation
Operating Temperature
Storage Temperature
Conditions
with respect to Vss
with respect to VssQ
with respect to Vss
with respect to VssQ
Ta = 25˚C
Ratings
-0.5 - 4.6
-0.5 - 4.6
-0.5 - 4.6
-0.5 - 4.6
50
1000
0 - 70
-65 - 150
Unit
V
V
V
V
mA
mW
˚C
˚C
RECOMMENDED OPERATING CONDITIONS
(Ta=0 - 70 ˚C ,unless otherwise noted)
Symbol
Parameter
Vdd
Supply Voltage
Vss
Supply Voltage
VddQ
Supply Voltage for output
VssQ
VIH*1
VIL*2
Supply Voltage for output
High-Level Input Voltage all inputs
Low-level Input Voltage all inputs
NOTES:
1. VIH(max)=5.5V for pulse width less than 10ns.
2. VIL(min)=-1.0V for pulse width less than 10ns.
Min.
3.0
0
3.0
0
2.0
-0.3
Limits
Typ.
3.3
0
3.3
0
Max.
3.6
3.6
0
VddQ +0.3
0.8
Unit
V
V
V
V
V
V
CAPACITANCE
(Ta=0 -70˚C,Vdd=VddQ=3.3± 0 . 3 V , V s s = V s s Q = 0 V , u n l e s s o t h e r w i s e n o t e d )
Symbol
Parameter
Test Condition Limits (min.)
Limits (max.)
Unit
-7
-75/-8
CI(A)
Input Capacitance, address pin
@ 1MHz
2.5
3.8
5.0
pF
CI(C)
Input Capacitance, contorl pin
1.4V bias
2.5
3.8
5.0
pF
CI(K)
Input Capacitance, CLK pin
200mV swing
Vcc=3.3V
2.5
3.5
4.0
pF
CI/O
Input Capacitance, I/O pin
4.0
6.5
6.5
pF
JULY.2000
Page-31
Rev.2.2
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