PHX8NQ11T View Datasheet(PDF) - Philips Electronics
Part Name
Description
MFG CO.
'PHX8NQ11T' PDF : 12 Pages View PDF
Philips Semiconductors
PHX8NQ11T
N-channel TrenchMOS™ standard level FET
3. Ordering information
Table 2: Ordering information
Type number
Package
Name
Description
Version
PHX8NQ11T
TO-220F
Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; SOT186A
3 lead TO-220 ‘full pack’
4. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
IDM
peak drain current
Ptot
total power dissipation
25 °C ≤ Tj ≤ 150 °C
25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ
Th = 25 °C; VGS = 10 V; Figure 2 and 3
Th = 100 °C; VGS = 10 V; Figure 2
Th = 25 °C; pulsed; tp ≤ 10 µs; Figure 3
Th = 25 °C; Figure 1
Tstg
storage temperature
Tj
junction temperature
Source-drain diode
IS
source (diode forward) current (DC) Th = 25 °C
ISM
peak source (diode forward) current Th = 25 °C; pulsed; tp ≤ 10 µs
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
unclamped inductive load; ID = 4.5 A;
tp = 0.1 ms; VDD ≤ 100 V; RGS = 50 Ω;
VGS = 10 V; starting at Tj = 25 °C
Min
Max Unit
-
110
V
-
110
V
-
±20
V
-
7.5
A
-
4.7
A
-
30.2 A
-
27.7 W
−55
+150 °C
−55
+150 °C
-
7.5
A
-
30.2 A
-
35
mJ
9397 750 13285
Product data
Rev. 01 — 14 May 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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