PHX8NQ11T View Datasheet(PDF) - Philips Electronics
Part Name
Description
MFG CO.
'PHX8NQ11T' PDF : 12 Pages View PDF
Philips Semiconductors
PHX8NQ11T
N-channel TrenchMOS™ standard level FET
16
ID
Tj = 25 °C
(A)
12
8
10 V 7 V
03ai95
6.5 V
6V
5.5 V
16
ID VDS > ID x RDSon
(A)
12
8
03ai97
4
5V
VGS = 4.5 V
0
0
2
4
6
VDS (V)
4
175 °C
Tj = 25 °C
0
0
2
4
6 VGS (V) 8
Tj = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Tj = 25 °C and 150 °C; VDS > ID x RDSon
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
0.3
03ai96
3
Tj = 25 °C VGS = 5 V
5.5 V
6V
RDSon
7V
a
(Ω)
0.2
2
10 V
03aa29
0.1
1
0
0
4
Tj = 25 °C
8
12
16
ID (A)
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
0
-60
0
60
120
180
Tj (°C)
a = --------R---D----S---o---n-------
R D S o n ( 25 °C )
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 13285
Product data
Rev. 01 — 14 May 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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