PHX8NQ11T View Datasheet(PDF) - Philips Electronics
Part Name
Description
MFG CO.
'PHX8NQ11T' PDF : 12 Pages View PDF
Philips Semiconductors
PHX8NQ11T
N-channel TrenchMOS™ standard level FET
16
IS VGS = 0 V
(A)
12
03ai98
8
175 °C
Tj = 25 °C
4
10
VGS
(V)
8
ID = 11 A
Tj = 25 °C
VDD = 20 V
6
4
2
03aj00
80 V
50 V
0
0
0.4
0.8
1.2
1.6
VSD (V)
0
0
5
10
15
QG (nC)
Tj = 25 °C and 150 °C; VGS = 0 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
ID = 11 A; VDD = 20 V, 50 V and 80 V
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
7. Isolation characteristics
Table 6: Isolation characteristics
Symbol Parameter
Visol
RMS isolation voltage from all three
terminals to external heatsink.
Cisol
Capacitance from pin 2 (drain) to
external heatsink.
Conditions
f = 50-60 Hz; sinusoidal waveform;
RH ≤ 65%; clean and dust-free.
f = 1 MHz
Min. Typ. Max. Unit
-
-
2500 V
-
10 -
pF
9397 750 13285
Product data
Rev. 01 — 14 May 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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