PHX8NQ11T View Datasheet(PDF) - Philips Electronics
Part Name
Description
MFG CO.
'PHX8NQ11T' PDF : 12 Pages View PDF
Philips Semiconductors
PHX8NQ11T
N-channel TrenchMOS™ standard level FET
5
VGS(th)
(V)
4
3
2
1
max
typ
min
03aj02
10-1
ID
(A)
10-2
10-3
min
10-4
10-5
03aj01
typ
max
0
-60
0
60
120
180
Tj (°C)
10-6
0
1
2
3
4
5
VGS(V)
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
Tj = 25 °C; VDS = 5 V
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
103
03ai99
C
Ciss
(pF)
102
Coss
Crss
10
10-1
1
10
102
VDS (V)
VGS = 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
9397 750 13285
Product data
Rev. 01 — 14 May 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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