RC28F800C3TC70 View Datasheet(PDF) - Intel
Part Name
Description
MFG CO.
'RC28F800C3TC70' PDF : 68 Pages View PDF
Intel£ Advanced+ Boot Block Flash Memory (C3)
7.2
Operating Conditions
Table 10. Temperature and Voltage Operating Conditions
Symbol
Parameter
Notes
Min
Max
Units
TA
VCC1
VCC2
VCCQ1
VCCQ2
VCCQ3
VPP1
VPP2
Cycling
Operating Temperature
VCC Supply Voltage
I/O Supply Voltage
Supply Voltage
Block Erase Cycling
–40
+85
1, 2
2.7
3.6
1, 2
3.0
3.6
1
2.7
3.6
1.65
2.5
1.8
2.5
1
1.65
3.6
1, 3
11.4
12.6
3
100,000
°C
Volts
Volts
Volts
Volts
Cycles
NOTES:
1. VCC and VCCQ must share the same supply when they are in the VCC1 range.
2. VCCMax = 3.3 V for 0.25µm 32-Mbit devices.
3. Applying VPP = 11.4 V–12.6 V during a program/erase can only be done for a maximum of 1000 cycles on
the main blocks and 2500 cycles on the parameter blocks. VPP may be connected to 12 V for a total of
80 hours maximum.
7.3
DC Current Characteristics
Table 11. DC Current Characteristics (Sheet 1 of 3)
Sym
Parameter
ILI
Input Load Current
ILO
Output Leakage
Current
VCC 2.7 V–3.6 V 2.7 V–2.85 V
VCCQ 2.7 V–3.6 V 1.65 V–2.5 V
Note Typ Max Typ Max
1,2
±1
±1
1,2
± 10
± 10
2.7 V–3.3 V
1.8 V–2.5 V
Typ Max
Unit
Test
Conditions
±1
± 10
VCC =
VCCMax
µA
VCCQ =
VCCQMax
VIN = VCCQ
or GND
VCC =
VCCMax
µA
VCCQ =
VCCQMax
VIN = VCCQ
or GND
Datasheet
35
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