RC28F800C3TC70 View Datasheet(PDF) - Intel
Part Name
Description
MFG CO.
'RC28F800C3TC70' PDF : 68 Pages View PDF
Intel£ Advanced+ Boot Block Flash Memory (C3)
Table 11. DC Current Characteristics (Sheet 2 of 3)
Sym
Parameter
VCC Standby Current
for 0.13 and 0.18
Micron Product
ICCS
VCC Standby Current
for 0.25 Micron
Product
ICCD
VCC Power-Down
Current for 0.13 and
0.18 Micron Product
VCC Power-Down
Current for 0.25
Product
VCC Read Current for
0.13 and 0.18 Micron
Product
ICCR
VCC Read Current for
0.25 Micron Product
IPPD
VPP Deep Power-
Down Current
ICCW VCC Program Current
ICCE VCC Erase Current
ICCES/
ICCWS
VCC Erase Suspend
Current for 0.13 and
0.18 Micron Product
VCC Erase Suspend
Current for 0.25
Micron Product
VCC 2.7 V–3.6 V 2.7 V–2.85 V
VCCQ 2.7 V–3.6 V 1.65 V–2.5 V
Note Typ Max Typ Max
1
7 15 20 50
1
10 25 20 50
1,2
7 15 7
20
1,2
7 25 7
25
1,2,3 9 18 8
15
1,2,3 10 18 8
15
1
0.2 5 0.2
5
18 55 18 55
1,4
8 22 10 30
16 45 21 45
1,4
8 15 16 45
7 15 50 200
1,4,5
10 25 50 200
2.7 V–3.3 V
1.8 V–2.5 V
Typ Max
Unit
Test
Conditions
VCC =
150 250 µA VCCMax
CE# = RP#
= VCCQ
or during
Program/
Erase
150 250 µA Suspend
WP# =
VCCQ or
GND
VCC =
7
20 µA VCCMax
VCCQ =
VCCQMax
VIN = VCCQ
7
25 µA or GND
RP# = GND
± 0.2 V
VCC =
9
15 mA VCCMax
VCCQ =
VCCQMax
OE# = VIH,
CE# =VIL
9
15 mA f = 5 MHz,
IOUT=0 mA
Inputs = VIL
or VIH
RP# = GND
0.2 5 µA ± 0.2 V
VPP ≤ VCC
VPP =VPP1,
18 55 mA Program in
Progress
VPP = VPP2
10
30
mA
(12v)
Program in
Progress
VPP = VPP1,
21 45 mA Erase in
Progress
VPP = VPP2
16
45
mA
(12v) ,
Erase in
Progress
50
200 µA CE# = VIH,
Erase
Suspend in
50 200 µA Progress
36
Datasheet
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