RC28F800C3TC70 View Datasheet(PDF) - Intel
Part Name
Description
MFG CO.
'RC28F800C3TC70' PDF : 68 Pages View PDF
Intel£ Advanced+ Boot Block Flash Memory (C3)
8.0
AC Characteristics
8.1
AC Read Characteristics
Table 13. Read Operations—8 Mbit Density
Density
8 Mbit
#
Sym
Parameter
Product
VCC
90 ns
110 ns
Unit
3.0 V – 3.6 V 2.7 V – 3.6 V 3.0 V – 3.6 V 2.7 V – 3.6 V
Note Min Max Min Max Min Max Min Max
R1
tAVAV Read Cycle Time
3,4 80
90
100
110
ns
R2
tAVQV Address to Output Delay 3,4
80
90
100
110 ns
R3
tELQV CE# to Output Delay
1,3,4
80
90
100
110 ns
R4
tGLQV OE# to Output Delay
1,3,4
30
30
30
30
ns
R5
tPHQV RP# to Output Delay
3,4
150
150
150
150 ns
R6
tELQX CE# to Output in Low Z 2,3,4
0
0
0
0
ns
R7
tGLQX OE# to Output in Low Z 2,3,4
0
0
0
0
ns
R8
tEHQZ CE# to Output in High Z 2,3,4
20
20
20
20
ns
R9
tGHQZ OE# to Output in High Z 2,3,4
20
20
20
20
ns
Output Hold from
R10 tOH
Address, CE#, or OE#
Change, Whichever
2,3,4
0
0
0
0
ns
Occurs First
NOTES:
1. OE# may be delayed up to tELQV–tGLQV after the falling edge of CE# without impact on tELQV.
2. Sampled, but not 100% tested.
3. See Figure 8, “Read Operation Waveform” on page 42.
4. See Figure 11, “AC Input/Output Reference Waveform” on page 49 for timing measurements and maximum allowable input
slew rate.
Datasheet
39
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