RC28F800C3TC70 View Datasheet(PDF) - Intel
Part Name
Description
MFG CO.
'RC28F800C3TC70' PDF : 68 Pages View PDF
Intel£ Advanced+ Boot Block Flash Memory (C3)
7.4
DC Voltage Characteristics
Table 12. DC Voltage Characteristics
VCC
2.7 V–3.6 V
2.7 V–2.85 V
2.7 V–3.3 V
Sym Parameter VCCQ
2.7 V–3.6 V
1.65 V–2.5 V
1.8 V–2.5 V
Unit Test Conditions
Note Min
Max
Min
Max
Min
Max
VIL
Input Low
Voltage
–0.4
VCC *
0.22 V
–0.4
0.4
–0.4
0.4
V
VIH
Input High
Voltage
2.0
VCCQ
+0.3V
VCCQ –
0.4V
VCCQ
+0.3V
VCCQ –
0.4V
VCCQ
+0.3V
V
VOL
Output Low
Voltage
VCC = VCCMin
–0.1
0.1
-0.1
0.1
-0.1
0.1
V VCCQ = VCCQMin
IOL = 100 µA
VOH
Output High
Voltage
VCCQ
–0.1V
VCCQ –
0.1V
VCCQ –
0.1V
VCC = VCCMin
V VCCQ = VCCQMin
IOH = –100 µA
VPPLK
VPP Lock-
Out Voltage
1
1.0
1.0
1.0
V
Complete Write
Protection
VPP1
VPP during
1
1.65
Program /
VPP2
Erase
Operations
1,2
11.4
3.6
12.6
1.65
11.4
3.6
12.6
1.65
3.6
V
11.4
12.6
V
VCC Prog/
VLKO
Erase
Lock
1.5
1.5
Voltage
1.5
V
VCCQ Prog/
VLKO2
Erase
Lock
1.2
1.2
Voltage
1.2
V
NOTES:
1. Erase and Program are inhibited when VPP < VPPLK and not guaranteed outside the valid VPP ranges of VPP1 and VPP2.
2. Applying VPP = 11.4 V–12.6 V during program/erase can only be done for a maximum of 1000 cycles on the main blocks and
2500 cycles on the parameter blocks. VPP may be connected to 12 V for a total of 80 hours maximum.
38
Datasheet
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