STL22N65M5 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
STL22N65M5
STMicroelectronics
'STL22N65M5' PDF : 17 Pages View PDF
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VGS
Gate-source voltage
Drain current (continuous) at TC = 25 °C
ID
Drain current (continuous) at TC = 100 °C
IDM(1)
Drain current (pulsed)
PTOT
Total power dissipation at TC = 25 °C
dv/dt(2)
Peak diode recovery voltage slope
Tstg
Storage temperature range
Tj
Operating junction temperature range
1. Pulse width is limited by safe operating area.
2. ISD ≤ 15 A, di/dt ≤ 400 A/μs, VDS(peak) < V(BR)DSS, VDD = 400 V
Table 2. Thermal data
Symbol
Parameter
RthJA
Thermal resistance, junction-to-case
RthJB(1)
Thermal resistance, junction-to-board
1. When mounted on an 1-inch² FR-4, 2oz Cu board
Table 3. Avalanche characteristics
Symbol
Parameter
IAR(1)
Avalanche current, repetitive or not repetitive
EAS(2)
Single pulse avalanche energy
1. Pulse width limited by Tjmax
2. Starting Tj = 25 °C, ID = IAR, VDD = 50 V
STL22N65M5
Electrical ratings
Value
±25
15
9.5
60
110
15
-55 to 150
Unit
V
A
A
W
V/ns
°C
Value
1.14
45
Unit
°C/W
°C/W
Value
Unit
4
A
270
mJ
DS9209 - Rev 4
page 2/17
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