STL22N65M5 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
STL22N65M5
STMicroelectronics
'STL22N65M5' PDF : 17 Pages View PDF
STL22N65M5
Electrical characteristics
Table 7. Source-drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
Source-drain current
-
15
A
ISDM(1)
Source-drain current (pulsed)
-
60
A
VSD(2)
trr
Qrr
IRRM
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGS = 0 V, ISD = 15 A
-
ISD = 15 A, di/dt = 100 A/µs,
-
VDD = 100 V
-
(see Figure 16. Test circuit for
inductive load switching and diode
-
recovery times)
1.5
V
272
ns
3.4
µC
25
A
trr
Reverse recovery time
ISD = 15 A, di/dt = 100 A/µs,
-
336
ns
Qrr
Reverse recovery charge
VDD = 100 V, Tj = 150 °C
-
4.3
µC
(see Figure 16. Test circuit for
IRRM
Reverse recovery current
inductive load switching and diode
-
25.6
A
recovery times)
1. Pulse width is limited by safe operating area.
2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
DS9209 - Rev 4
page 4/17
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