STL22N65M5 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
STL22N65M5
STMicroelectronics
'STL22N65M5' PDF : 17 Pages View PDF
STL22N65M5
Electrical characteristics
2
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 4. Static
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown voltage VGS = 0 V, ID = 1 mA
IDSS
Zero gate voltage drain current
VGS = 0 V, VDS = 650 V
VGS = 0 V, VDS = 650 V,
Tcase = 125 °C(1)
IGSS
Gate-body leakage current
VDS = 0 V, VGS = ±25 V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source on-resistance VGS = 10 V, ID = 8.5 A
1. Defined by design, not subject to production test.
Min. Typ. Max. Unit
650
V
1
µA
100
±100 nA
3
4
5
V
180 210 mΩ
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Input capacitance
-
1434
-
Coss
Output capacitance
VDS = 100 V, f = 1 MHz, VGS = 0 V
-
38
-
pF
Crss
Reverse transfer capacitance
-
3.7
-
Co(er)(1)
Co(tr)(2)
Equivalent output capacitance
energy related
Equivalent output capacitance
time related
VDS = 0 to 520 V, VGS = 0 V
-
35
-
pF
-
118
-
RG
Intrinsic gate resistance
Qg
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
f = 1 MHz open drain
-
3.5
-
Ω
VDD = 520 V, ID = 9 A,
-
36
-
VGS = 0 to 10 V
-
7.5
-
nC
(see Figure 15. Test circuit for gate
charge behavior)
-
18
-
1. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
2. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Symbol
td(v)
tr(v)
tf(i)
tc(off)
Parameter
Voltage delay time
Voltage rise time
Current fall time
Crossing time
Table 6. Switching times
Test conditions
VDD = 400 V, ID = 12 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 16. Test circuit
for inductive load switching
and diode recovery times and
Figure 19. Switching time
waveform)
Min. Typ. Max. Unit
-
43
-
-
7.5
-
-
7.5
-
ns
-
11.5
-
DS9209 - Rev 4
page 3/17
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