STL26NM60N View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
STL26NM60N
STMicroelectronics
'STL26NM60N' PDF : 14 Pages View PDF
STL26NM60N
1
Electrical ratings
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
VDS Drain-source voltage (VGS = 0)
VGS
ID (1)
ID (1)
ID(2)
ID(2)
IDM(2),(3)
PTOT (2)
PTOT(1)
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (continuous) at Tamb = 25 °C
Drain current (continuous) at Tamb = 100 °C
Drain current (pulsed)
Total dissipation at Tamb = 25 °C
Total dissipation at TC = 25 °C
IAR
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj max)
EAS
dv/dt (3)
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Peak diode recovery voltage slope
600
± 25
19
12
2.7
1.7
10.8
3
125
7.5
400
15
Tstg Storage temperature
Tj Max. operating junction temperature
- 55 to 150
150
1. The value is rated according to Rthj-case
2. When mounted on FR-4 board of inch², 2oz Cu
3. ISD ≤ 19 A, di/dt ≤ 400 A/µs, VDS peak≤V(BR)DSS, VDD = 80% V(BR)DSS
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-amb(1) Thermal resistance junction-amb max
1. When mounted on 1inch² FR-4 board, 2 oz Cu
Value
0.83
45
Unit
V
V
A
A
A
A
A
W
W
A
mJ
V/ns
°C
°C
Unit
°C/W
°C/W
Doc ID 18472 Rev 2
3/14
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