STL26NM60N View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

STL26NM60N

N-channel 600 V, 0.160 Ω, 19 A PowerFLAT™ 8x8 HV ultra low gate charge MDmesh™ II Power MOSFET

STMicroelectronics 

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STL26NM60N

Electrical characteristics

Table 6. Switching times

Symbol

Parameter

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Test conditions

VDD = 300 V, ID = 10 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 15),

(see Figure 18)

Min. Typ. Max Unit

13

ns

25

ns

-

-

85

ns

50

ns

Table 7.

Symbol

Source drain diode

Parameter

Test conditions

Min. Typ. Max. Unit

ISD Source-drain current

ISDM (1) Source-drain current (pulsed)

-

VSD (2) Forward on voltage

ISD = 19 A, VGS = 0

-

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 19 A, di/dt = 100 A/µs

-

VDD = 100 V (see Figure 15)

trr

Reverse recovery time

ISD = 19 A, di/dt = 100 A/µs

Qrr Reverse recovery charge

VDD = 100 V, Tj = 150 °C

-

IRRM Reverse recovery current

(see Figure 15)

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

19 A

76 A

1.5 V

370

ns

5.8

µC

31.5

A

450

ns

7.5

µC

32.5

A

Doc ID 18472 Rev 2

5/14

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