STL26NM60N View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

STL26NM60N

N-channel 600 V, 0.160 Ω, 19 A PowerFLAT™ 8x8 HV ultra low gate charge MDmesh™ II Power MOSFET

STMicroelectronics 

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STL26NM60N

Electrical characteristics

Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations

VGS

(V)

12

VDS

10

8

6

4

2

VDD=480V

ID=19A

AM08990v1

500

400

300

200

100

C

(pF)

10000

1000

100

10

0

0

0 10 20 30 40 50 60 Qg(nC)

1

0.1

1

10

100

AM03319v1

Ciss

Coss

Crss

VDS(V)

Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs

vs temperature

temperature

VGS(th)

(norm)

1.10

ID=250µA

AM08991v1

RDS(on)

(norm)

2.1

1.9

VGS=10V

ID=10A

AM08992v1

1.00

1.7

1.5

0.90

1.3

1.1

0.80

0.9

0.70

-50 -25 0 25 50 75 100 125 TJ(°C)

0.7

0.5

-50 -25 0

25 50 75 100 TJ(°C)

Figure 12. Source-drain diode forward

characteristics

VSD

(V)

1.4

TJ=-50°C

1.2

AM08993v1

1.0

TJ=25°C

0.8

0.6

TJ=150°C

0.4

0.2

0

0

4

8

12 16 20 ISD(A)

Doc ID 18472 Rev 2

7/14

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