Electrical characteristics
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4. On /off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
VDS = 600 V
drain current (VGS = 0) VDS =600 V, TC=125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
Gate threshold voltage VDS = VGS, ID = 250 µA
Static drain-source on
resistance
VGS = 10 V, ID = 10 A
STL26NM60N
Min. Typ. Max. Unit
600
V
1 µA
100 µA
100 nA
3
4
5
V
0.160 0.185 Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
1800
pF
-
115
- pF
1.1
pF
Equivalent
Coss(eq)(1) capacitance time
related
VDS = 0 to 480 V, VGS = 0
-
310
- pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
2.8
-
Ω
Qg
Total gate charge
VDD = 480 V, ID = 19 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 14)
60
nC
-
8.5
- nC
30
nC
1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS increases from 0 to 80% VDSS
4/14
Doc ID 18472 Rev 2