TGA2509 View Datasheet(PDF) - TriQuint Semiconductor
Part Name
Description
MFG CO.
'TGA2509' PDF : 7 Pages View PDF
TGA2509
TABLE I
MAXIMUM RATINGS 1/
SYMBOL
PARAMETER
V+
Positive Supply Voltage
Vg1 Gate 1 Supply Voltage Range
VALUE
12.5 V
-2V TO 0 V
Vg2 Gate 2 Supply Voltage Range
Vc AGC Control Voltage Range
I+
Positive Supply Current
| IG | Gate Supply Current
PIN Input Continuous Wave Power
PD Power Dissipation (without using AGC)
PD Power Dissipation (when Vc < +2V)
TCH Operating Channel Temperature
Mounting Temperature (30 Seconds)
TSTG Storage Temperature
-2V TO 0 V
Vc < +5 V
V+ –Vc < 14V
1.4 A
70 mA
30 dBm
17.5 W
15.7 W
200 °C
320 °C
-65 to 150 °C
NOTES
2/
2/
2/
2/, 3/
2/, 3/
4/, 5/
1/ These ratings represent the maximum operable values for this device.
2/ Current is defined under no RF drive conditions. Combinations of supply voltage, supply current,
input power, and output power shall not exceed PD.
3/ When operated at this power dissipation with a base plate temperature of 70 °C, the median life
is 8.2E4 hours (without AGC) or 2.3E4 hours (with AGC).
4/ Junction operating temperature will directly affect the device median time to failure (Tm). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible
levels.
5/ These ratings apply to each individual FET.
2
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
May 2009 © Rev -
Share Link: 
