TGA2509 View Datasheet(PDF) - TriQuint Semiconductor
Part Name
Description
MFG CO.
'TGA2509' PDF : 7 Pages View PDF
TGA2509
TABLE III
THERMAL INFORMATION
PARAMETER
TEST CONDITIONS
θJC Thermal
Resistance
(channel to backside
of carrier)
θJC Thermal
Resistance
(channel to backside
of carrier)
Vd = 12 V
ID = 1.1 A
Pdiss = 13.2 W
(without using AGC)
Vd = 12 V
ID = 0.88 A
Pdiss = 10.6 W
(when using AGC)
TCH
θJC
Tm
(oC) (°C/W) (HRS)
155
6.4
6.7E+5
158
8.3
5.2E+5
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil
CuMo Carrier at 70 °C baseplate temperature. Worst case is at saturated output
power when DC power consumption rises to 15 W with 1 W RF power
delivered to load. Power dissipated is 14 W and the temperature rise in the
channel is 90 °C.
Median Lifetime (Tm) vs. Channel Temperature
4
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