4MBI300VG-120R-50 View Datasheet(PDF) - Fuji Electric
Part Name
Description
MFG CO.
'4MBI300VG-120R-50' PDF : 11 Pages View PDF
4MBI300VG-120R-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Symbols Conditions
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
ICES
VGE = 0V, VCE = 1200V
IGES
VCE = 0V, VGE = ±20V
VGE (th)
VCE = 20V, IC = 300mA
VCE (sat)
(chip)
VGE = 15V
IC = 300A
Tj= 25°C
Tj=125°C
VCE (sat)
(terminal)
VGE = 15V
IC = 300A
Tj= 25°C
Tj=125°C
Cies
VCE = 10V, VGE =0V, f = 1MHz
ton
tr
SW mode : A
VCC = 800V
tr (i)
IC = 300A
toff
VGE = ±15V
RG = +10/-1Ω
tf
VF (chip) IF = 300A
Tj= 25°C
Tj=125°C
VF (terminal) IF = 300A
Tj= 25°C
Tj=125°C
Characteristics
min. typ. max.
-
-
2.0
-
-
400
6.0
6.5
7.0
-
1.85 2.10
-
2.20
-
-
2.05 2.35
-
2.40
-
-
25.2
-
-
1.10 1.90
-
0.70 1.25
-
0.14
-
-
0.62 1.10
-
0.09 0.35
-
1.70 1.95
-
1.85
-
-
1.95 2.25
-
2.10
-
Reverse recovery time
SW mode : A
trr
VCC = 800V
IF = 300A
VGE = ±15V
RG = +10/-1Ω
-
-
0.35
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
ICES
IGES
VGE (th)
VCE (sat)
(chip)
VCE (sat)
(terminal)
Cies
ton
tr
tr (i)
toff
tf
VGE = 0V, VCE = 600V
VCE = 0V, VGE = ±20V
VCE = 20V, IC = 300mA
VGE = 15V
IC = 300A
Tj= 25°C
Tj=125°C
VGE = 15V
IC = 300A
Tj= 25°C
Tj=125°C
VCE = 10V, VGE = 0V, f = 1MHz
SW mode : B
VCC = 400V
IC = 300A
VGE = ±15V
RG = +8.2/-39Ω
-
-
3.0
-
-
600
5.5
6.5
7.5
-
2.45 2.80
-
2.60
-
-
2.55 2.95
-
2.70
-
-
19.5
-
-
0.45 1.05
-
0.27 0.53
-
0.12
-
-
1.32 3.00
-
0.11 0.35
Reverse recovery time
SW mode : C
trr
VCC = 400V
IC = 300A
VGE = ±15V
RG = +10/-1Ω
-
-
0.30
Internal inductance
P-N
L
P-M
M-N
-
40
-
-
33
-
-
33
-
Thermal resistance characteristics
Items
Symbols Conditions
Characteristics
min. typ. max.
T1, T2 IGBT
-
-
0.10
Thermal resistance (1device)
Rth(j-c)
T1, T2 FWD
-
-
0.16
T3, T4 RB-IGBT
-
-
0.10
Contact thermal resistance (1device) (*4)
Rth(c-f)
T1, T2
T3, T4
with Thermal Compound
-
0.025
-
-
0.017
-
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound (thermal conductivity = 1W/m ·k).
Units
mA
nA
V
V
nF
µs
V
µs
mA
nA
V
V
nF
µs
µs
nH
Units
°C/W
2
Share Link: 
