4MBI300VG-120R-50
[ SW mode A ]
Switching time vs. Collector current (typ.)
VCC=800V, VGE=±15V, RG=+10/-1Ω, Tj=125°C (T1, T2)
10000
ton
1000
tr
toff
tf
100
10
0
100
200
300
400
500
Collector current: IC [A]
[ SW mode A ]
Switching loss vs. gate resistance (typ.)
VCC=800V, IC=300A, VGE=±15V
600
500
400
Eon(125°C)
300
200
Eon(25°C)
100
Eoff(125°C)
0 Eoff(25°C)
1
Err(125°C)
Err(25°C)
10
100
Gate resistance : RG [Ω] (T1, T2)
[ T1, T2 ]
Forward current vs. forward on voltage (typ.)
chip
600
500
Tj=25°C
Tj=125°C
400
300
200
100
0
0
1
2
3
4
Forward on voltage : VF [V]
5
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[ SW mode A ]
Switching time vs. Collector current (typ.)
VCC=800V, IC=300A, VGE=±15V, Tj=125°C
10000
1000 toff
tf
100
ton
tr
10
1
10
100
Gate resistance : RG [Ω] (T1, T2)
[ SW mode A]
Switching loss vs. Collector current (typ.)
VCC=800V, VGE=±15V, RG=+10/-1Ω (T1, T2)
200
Eon(125°C)
150
Eon(25°C)
100
50
0
0
Eoff(125°C)
Eoff(25°C)
Err(125°C)
Err(25°C)
100 200 300 400 500 600
Collector current: IC [A]
[ T1, T2 ]
Reverse recovery characteristics (typ.)
VCC=800V, VGE=±15V, RG=+10/-1Ω (T1, T2)
1000
trr(125°C)
Irr(125°C)
trr(25°C)
Irr(25°C)
100
10
0
100 200 300 400 500 600
Forward current : IF [A]