4MBI300VG-120R-50 View Datasheet(PDF) - Fuji Electric
Part Name
Description
MFG CO.
'4MBI300VG-120R-50' PDF : 11 Pages View PDF
4MBI300VG-120R-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[ T3, T4 ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
600
VGE=20V 15V
12V
500
400
10V
300
200
100
0
0
8V
1
2
3
4
5
Collector-Emitter voltage: VCE [V]
[ T3, T4 ]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
600
500
Tj=25°C
Tj=125°C
400
300
200
100
0
0
1
2
3
4
5
Collector-Emitter voltage: VCE [V]
[ T3, T4 ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
100
Cies
10
Coes
Cres
1
0.1
0.01
0
10
20
30
Collector - Emitter voltage: VCE [V]
7
[ T3, T4 ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C / chip
600
VGE=20V 15V 12V
500
400
10V
300
200
100
8V
0
0
1
2
3
4
5
Collector-Emitter voltage: VCE [V]
[ T3, T4 ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj= 25°C / chip
8
6
4
IC=600A
2
IC=300A
IC=150A
0
5
10
15
20
25
Gate - Emitter voltage: VGE [V]
[ T3, T4 ]
Dynamic gate charge (typ.)
VCC=300V, IC=300A, Tj=25°C
400
25
300
VCE
200
100
VGE
20
15
10
5
0
0
0 0.2 0.4 0.6 0.8 1 1.2
Gate charge: Qg [µC]
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