4MBI300VG-120R-50 View Datasheet(PDF) - Fuji Electric
Part Name
Description
MFG CO.
'4MBI300VG-120R-50' PDF : 11 Pages View PDF
4MBI300VG-120R-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Reverse bias safe operating area (max.)
VGE=15V, -VGE ≦ 15V, RG ≧ +10 / -1Ω, Tj ≦ 125°C, LS = 46nH (T1, T2)
T1, T2 (Terminal)
1000
800
600
400
RBSOA
(Repetitive pulse)
200
0
0
400
800
1200
Collector-Emitter voltage : VCE [V]
[ SW mode C ]
Switching time vs. Collector current (typ.)
VCC=400V, VGE=±15V, RG=+10/-1Ω, Tj=125°C (T1, T2)
10000
ton
1000
toff
tr
100
tf
[ SW mode C ]
Switching time vs. Collector current (typ.)
VCC=400V, IC=300A, VGE=±15V, Tj=125°C
10000
ton
1000 toff
tr
100 tf
10
0
100
200
300
400
500
Collector current: IC [A]
[ SW mode C ]
Switching loss vs. gate resistance (typ.)
VCC=400V, IC=300A, VGE=±15V
200
150
100
50
Eoff(125°C)
Eoff(25°C)
0
1
Eon(125°C)
Eon(25°C)
Err(125°C)
Err(25°C)
10
100
Gate resistance : RG [Ω] (T1, T2)
6
10
1
10
100
Gate resistance : RG [Ω] (T1, T2)
[ SW mode C]
Switching loss vs. Collector current (typ.)
VCC=400V, VGE=±15V, RG=+10/-1Ω (T1, T2)
75
Eon(125°C)
50
Eon(25°C)
Eoff(125°C)
Eoff(25°C)
25
Err(125°C)
Err(25°C)
0
0 100 200 300 400 500 600
Collector current: IC [A]
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