4MBI300VG-120R-50 View Datasheet(PDF) - Fuji Electric
Part Name
Description
MFG CO.
'4MBI300VG-120R-50' PDF : 11 Pages View PDF
4MBI300VG-120R-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[ SW mode B ]
Switching time vs. Collector current (typ.)
VCC=400V, VGE=±15V, RG=+8.2/-39Ω, Tj=125°C (T3, T4)
10000
toff
1000
ton
tr
100
tf
[ SW mode B ]
Switching time vs. Collector current (typ.)
VCC=400V, IC=300A, VGE=±15V, Tj=125°C
10000
toff
1000
ton
tf
tr
100
10
0
100
200
300
400
500
Collector current: IC [A]
[ SW mode B ]
Switching loss vs. gate resistance (typ.)
VCC=400V, IC=300A, VGE=±15V
150
Eon(125°C)
Eon(25°C)
100
Eoff(125°C)
Eoff(25°C)
50
Err(125°C)
0
Err(25°C)
1
10
100
1000
Gate resistance : RG [Ω] (T3, T4)
Transient Thermal Resistance (max.)
1
FWD
0.1
IGBT, RB-IGBT
0.01
0.001
0.001
0.01
0.1
1
Pulse Width : PW [sec]
10
1
10
100
1000
Gate resistance : RG [Ω] (T3, T4)
[ SW mode B ]
Switching loss vs. Collector current (typ.)
VCC=400V, VGE=±15V, RG=+8.2/-39Ω (T3, T4)
60
50
Eoff(125°C)
Eoff(25°C)
40
30
20
10
0
0
Eon(125°C)
Eon(25°C)
Err(125°C)
Err(25°C)
100 200 300 400 500 600
Collector current: IC [A]
Reverse bias safe operating area (max.)
VGE = 15V, -VGE ≦ 15V, RG ≧ +8.2 / -39Ω, Tj ≦ 125°C, LS = 46nH (T3, T4)
T3, T4 (Terminal)
1000
800
600
400
RBSOA
(Repetitive pulse)
200
0
0
200
400
600
800
Collector-Emitter voltage : VCE [V]
8
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