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ATF-55143 View Datasheet(PDF) - Avago Technologies

Part Name
Description
MFG CO.
'ATF-55143' PDF : 20 Pages View PDF
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ATF-55143 Absolute Maximum Ratings[1]
Symbol
Parameter
V
DS
V
GS
V
GD
I
DS
I
GS
P
diss
Pin max.
Drain-Source Voltage[2]
Gate-Source Voltage[2]
Gate Drain Voltage [2]
Drain Current[2]
Gate Current[5]
Total Power Dissipation [3]
RF Input Power[5]
(Vds=2.7V, Ids=10mA)
(Vds=0V, Ids=0mA)
T
Channel Temperature
CH
T
Storage Temperature
STG
jc
Thermal Resistance [4]
ESD (Human Body Model)
ESD (Machine Model)
Notes:
1. Operation of this device above any one of these parameters may
cause permanent damage.
2. Assumes DC quiescent conditions.
3. Source lead temperature is 25°C. Derate 4.3 mW/°C for T > 87°C.
L
4. Thermal resistance measured using 150°C Liquid Crystal Measure-
ment method.
5. Device can safely handle +10 dBm RF Input Power as long as I is
GS
limited to 1 mA. I at P drive level is bias circuit dependent. See
GS
1dB
applications section for additional information.
Absolute
Units
Maximum
V
5
V
-5 to 1
V
-5 to 1
mA
100
mA
1
mW
270
dBm
dBm
°C
°C
°C/W
V
V
70
60
10
10
150
-65 to 150
235
200
25
0.7 V
50
40
0.6 V
30
20
0.5 V
10
0
0 12 3 45
VDS (V)
Figure 1. Typical I-V Curves.
(VGS = 0.1 V per step)
0.4 V
0.3V
67
Product Consistency Distribution Charts [6,7]
300
200
240
Cpk = 2.02
Cpk = 1.023
250
Stdev = 0.36
Stdev = 0.28
160
200
200
-3 Std
150
100
160
120
-3 Std
+3 Std
+3 Std
120
80
80
50
40
40
Cpk = 3.64
Stdev = 0.031
0
22
23
24
25
26
OIP3 (dBm)
Figure 2. OIP3 @ 2.7 V, 10 mA.
LSL = 22.0, Nominal = 24.2
0
15
16
17
18
19
GAIN (dB)
Figure 3. Gain @ 2.7 V, 10 mA.
USL = 18.5, LSL = 15.5, Nominal = 17.7
0
0.43 0.53 0.63 0.73 0.83 0.93
NF (dB)
Figure 4. NF @ 2.7 V, 10 mA.
USL = 0.9, Nominal = 0.6
Notes:
6. Distribution data sample size is 500 samples taken from 6 different wafers. Future wafers allocated to this product may have nominal values
anywhere between the upper and lower limits.
7. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match
based on production test equipment. Circuit losses have been de-embedded from actual measurements.
2
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