ATF-55143 Typical Performance Curves, continued
17
25
16
24
15
23
14
22
13
21
12
2V
11
2.7V
3V
10
0 5 10 15 20 25 30 35
Idq (mA)
Figure 15. P1dB vs. Idq and Vds at 2 GHz.[1,2]
20
2V
19
2.7V
3V
18
0 5 10 15 20 25 30 35 40
Ids (mA)
Figure 16. Gain vs. Ids and Vds at 900 MHz.[1]
0.35
0.30
0.25
0.20
0.15
2V
2.7V
3V
0.10
0 5 10 15 20 25 30 35
Ids (mA)
Figure 17. Fmin vs. Ids and Vds at 900 MHz.
32
30
28
26
24
22
20
2V
2.7V
18
3V
16
0 5 10 15 20 25 30 35
Ids (mA)
Figure 18. OIP3 vs. Ids and Vds at 900 MHz.[1]
7
6
5
4
3
2
1
0
2V
-1
2.7V
3V
-2
0 5 10 15 20 25 30 35
Ids (mA)
Figure 19. IIP3 vs. Ids and Vds at 900 MHz.[1]
17
16
15
14
13
12
11
2V
2.7V
10
3V
9
0 5 10 15 20 25 30 35
Idq (mA)
Figure 20. P1dB vs. Idq and Vds at
900 MHz.[1,2]
Notes:
1. Measurements at 2 GHz were made on a fixed tuned production test board that was tuned for optimal OIP3 match with reasonable noise figure
at 2.7 V, 10 mA bias. This circuit represents a trade-off between optimal noise match, maximum OIP3 match and a realizable match based on
production test board requirements. Measurements taken above and below 2 GHz were made using a double stub tuner at the input tuned for
low noise and a double stub tuner at the output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measurements.
2. P1dB measurements are performed with passive biasing. Quiescent drain current, I , is set with zero RF drive applied. As P1dB is approached,
dsq
the drain current may increase or decrease depending on frequency and dc bias point. At lower values of I , the device is running close to class
dsq
B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is
driven by a constant current source as is typically done with active biasing. As an example, at a V = 2.7V and I = 5 mA, I increases to 15 mA
DS
dsq
d
as a P1dB of +14.5 dBm is approached.
5