ATF-55143 View Datasheet(PDF) - Avago Technologies
Part Name
Description
MFG CO.
ATF-55143
Avago Technologies
'ATF-55143' PDF : 20 Pages View PDF
ATF-55143 Electrical Specifications
T = 25°C, RF parameters measured in a test circuit for a typical device
A
Symbol Parameter and Test Condition
Units
Min.
Vgs
Operational Gate Voltage
Vds = 2.7V, Ids = 10 mA
V
0.3
Vth
Threshold Voltage
Vds = 2.7V, Ids = 2 mA
V
0.18
Idss
Saturated Drain Current
Vds = 2.7V, Vgs = 0V
μA
—
Gm
Transconductance
Vds = 2.7V, gm = Idss/Vgs; mmho
110
Vgs = 0.75 – 0.7 = 0.05V
Igss
Gate Leakage Current
Vgd = Vgs = -2.7V
μA
—
NF
Noise Figure [1]
f = 2 GHz Vds = 2.7V, Ids = 10 mA
dB
—
f = 900 MHz Vds = 2.7V, Ids = 10 mA
dB
—
Ga
Associated Gain [1]
f = 2 GHz Vds = 2.7V, Ids = 10 mA
dB
15.5
f = 900 MHz Vds = 2.7V, Ids = 10 mA
dB
—
OIP3
Output 3rd Order
Intercept Point [1]
f = 2 GHz Vds = 2.7V, Ids = 10 mA
f = 900 MHz Vds = 2.7V, Ids = 10 mA
dBm
22.0
dBm
—
P1dB
1dB Compressed
Output Power [1]
f = 2 GHz Vds = 2.7V, Ids = 10 mA
f = 900 MHz Vds = 2.7V, Ids = 10 mA
Notes:
1. Measurements obtained using production test board described in Figure 5.
2. Typical values determined from a sample size of 500 parts from 6 wafers.
dBm
—
dBm
—
Typ.[2]
Max.
0.47
0.65
0.37
0.53
0.1
3
220
285
—
95
0.6
0.9
0.3
—
17.7
18.5
21.6
—
24.2
—
22.3
—
14.4
—
14.2
—
Input
50 Ohm
Input
Output
50 Ohm
Output
Transmission
Matching Circuit
Matching Circuit
Transmission
Line Including
Γ_mag = 0.4
DUT
Γ_mag = 0.5
Line Including
Gate Bias T
Γ_ang = 83°
Γ_ang = -26°
Drain Bias T
(0.3 dB loss)
(0.3 dB loss)
(1.2 dB loss)
(0.3 dB loss)
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, OIP3, and IIP3 measurements. This circuit represents a trade-off between
an optimal noise match, maximum OIP3 match and associated impedance matching circuit losses. Circuit losses have been de-embedded from actual measurements.
3
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