ATF-55143 View Datasheet(PDF) - Avago Technologies
Part Name
Description
MFG CO.
ATF-55143
Avago Technologies
'ATF-55143' PDF : 20 Pages View PDF
ATF-55143 Typical Performance Curves
30
1.2
25
20
15
10
2V, 10 mA
2.7V, 10 mA
5
0
1
2
3
4
5
6
FREQUENCY (GHz)
Figure 6. Gain vs. Bias over Frequency.[1]
1.0
0.8
0.6
0.4
0.2
2V, 10 mA
2.7V, 10 mA
0
0
1
2
3
4
5
6
FREQUENCY (GHz)
Figure 7. Fmin vs. Frequency and Bias.
27
25
23
21
19
17
2V, 10 mA
2.7V, 10 mA
15
0
1
2
3
4
5
6
FREQUENCY (GHz)
Figure 8. OIP3 vs. Bias over Frequency.[1]
15
10
5
0
2V, 10 mA
2.7V, 10 mA
-5
0
1
2
3
4
5
6
FREQUENCY (GHz)
Figure 9. IIP3 vs. Bias over Frequency.[1]
16
14
12
10
2V, 10 mA
2.7V, 10 mA
8
0
1
2
3
4
5
6
FREQUENCY (GHz)
Figure 10. P1dB vs. Bias over Frequency.[1,2]
21
20
19
18
17
2V
16
2.7V
3V
15
0 5 10 15 20 25 30 35
Ids (mA)
Figure 11. Gain vs. Ids and Vds at 2 GHz.[1]
0.60
0.55
0.50
0.45
0.40
0.35
0.30
2V
2.7V
0.25
3V
0.20
0 5 10 15 20 25 30 35
Ids (mA)
Figure 12. Fmin vs. Ids and Vds at 2 GHz.
35
33
31
29
27
25
23
2V
2.7V
21
3V
19
0 5 10 15 20 25 30 35
Ids (mA)
Figure 13. OIP3 vs. Ids and Vds at 2 GHz.[1]
16
14
12
10
8
6
4
2V
2.7V
2
3V
0
0 5 10 15 20 25 30 35
Ids (mA)
Figure 14. IIP3 vs. Ids and Vds at 2 GHz.[1]
Notes:
1. Measurements at 2 GHz were made on a fixed tuned production test board that was tuned for optimal OIP3 match with reasonable noise figure
at 2.7 V, 10 mA bias. This circuit represents a trade-off between optimal noise match, maximum OIP3 match and a realizable match based on
production test board requirements. Measurements taken above and below 2 GHz were made using a double stub tuner at the input tuned for
low noise and a double stub tuner at the output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measurements.
2. P1dB measurements are performed with passive biasing. Quiescent drain current, I , is set with zero RF drive applied. As P1dB is approached,
dsq
the drain current may increase or decrease depending on frequency and dc bias point. At lower values of I , the device is running close to class
dsq
B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is
driven by a constant current source as is typically done with active biasing. As an example, at a V = 2.7V and I = 5 mA, I increases to 15 mA
DS
dsq
d
as a P1dB of +14.5 dBm is approached.
4
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