ATF-55143 Typical Performance Curves, continued
28
25°C
-40°C
85°C
23
2.0
25°C
-40°C
85°C
1.5
18
1.0
13
0.5
8
0
1
2
3
4
5
6
FREQUENCY (GHz)
Figure 21. Gain vs. Temperature and
Frequency with bias at 2.7V, 10 mA.[1]
16
14
12
10
8
6
4
2
0
25°C
-40°C
-2
85°C
-4
-6
0
1
2
3
4
5
6
FREQUENCY (GHz)
Figure 24. IIP3 vs. Temperature and
Frequency with bias at 2.7V, 10 mA.[1]
0
0
1
2
3
4
5
6
FREQUENCY (GHz)
Figure 22. Fmin vs. Frequency and
Temperature at 2.7V, 10 mA.
16
15
14
13
12
25°C
-40°C
11
85°C
10
0
1
2
3
4
5
6
FREQUENCY (GHz)
Figure 25. P1dB vs. Temperature and
Frequency with bias at 2.7V, 10 mA.[1,2]
25
24
23
22
21
25°C
-40°C
20
85°C
19
0
1
2
3
4
5
6
FREQUENCY (GHz)
Figure 23. OIP3 vs. Temperature and
Frequency with bias at 2.7V, 10 mA.[1]
Notes:
1. Measurements at 2 GHz were made on a fixed tuned production test board that was tuned for optimal OIP3 match with reasonable noise figure
at 2.7 V, 10 mA bias. This circuit represents a trade-off between optimal noise match, maximum OIP3 match and a realizable match based on
production test board requirements. Measurements taken above and below 2 GHz were made using a double stub tuner at the input tuned for
low noise and a double stub tuner at the output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measurements.
2. P1dB measurements are performed with passive biasing. Quiescent drain current, I , is set with zero RF drive applied. As P1dB is approached,
dsq
the drain current may increase or decrease depending on frequency and dc bias point. At lower values of I , the device is running close to class
dsq
B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is
driven by a constant current source as is typically done with active biasing. As an example, at a V = 2.7V and I = 5 mA, I increases to 15 mA
DS
dsq
d
as a P1dB of +14.5 dBm is approached.
6