IDT71L016L100PH View Datasheet(PDF) - Integrated Device Technology
Part Name
Description
MFG CO.
'IDT71L016L100PH' PDF : 8 Pages View PDF
IDT71L016
LOW POWER 3V CMOS STATIC RAM 1 MEG (64K x 16-BIT)
COMMERCIAL AND INDUSTRIAL TEMPERATURE RANGES
DATA RETENTION CHARACTERISTICS OVER ALL TEMPERATURE RANGES
(VLC = 0.2V, VHC = VDD - 0.2V)
Symbol
Parameter
Test Condition
Min.
Typ. (1)
VDR
VCC for Data Retention
—
1.5
—
ICCDR
tCDR(3)
tR(3)
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
CS ≥ VHC
—
<1
0
—
tRC(2)
—
NOTES:
1. TA = +25°C.
2. tRC = Read Cycle Time.
3. This parameter is guaranteed by device characterization, but is not production tested.
Max.
Unit
—
V
5
µA
—
ns
—
ns
3771 tbl 09
LOW VDD DATA RETENTION WAVEFORM
V DD
CS
tCDR
2.7V
V IH
DATA
RETENTION
MODE
V DR ≥ 1.5V
V DR
2.7V
tR
V IH
3771 drw 05
AC TEST CONDITIONS
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
AC Test Load
GND to 2.5V
3ns
1.5V
1.5V
See Figure 1
3771 tbl 09
AC TEST LOAD
DATAOUT
50pF*
VDD
3070Ω
3150Ω
*Including jig and scope capacitance.
3771 drw 04
Figure 1. AC Test Load
4
Share Link: 
