LH28F016SCH-L View Datasheet(PDF) - Sharp Electronics
Part Name
Description
MFG CO.
'LH28F016SCH-L' PDF : 44 Pages View PDF
LH28F016SC-L/SCH-L
6.2.8 BLOCK ERASE, BYTE WRITE AND LOCK-BIT CONFIGURATION PERFORMANCE (NOTE 3, 4)
• VCC = 3.3±0.3 V, TA = 0 to +70˚C or –40 to +85˚C
SYMBOL
PARAMETER
VPP = 3.3±0.3 V
NOTE MIN. TYP.(NOTE 1) MAX.
tWHQV1
Byte Write Time
tEHQV1
2 15 17 TBD
Block Write Time
2
1 1.1 TBD
tWHQV2
Block Erase Time
tEHQV2
2 1.5 1.8 TBD
tWHQV3
Set Lock-Bit Time
tEHQV3
2 18 21 TBD
tWHQV4 Clear Block Lock-Bits
2 1.5 1.8 TBD
tEHQV4 Time
tWHRH1 Byte Write Suspend
tEHRH1 Latency Time to Read
7.1 10
tWHRH2 Erase Suspend Latency
tEHRH2 Time to Read
15.2 21.1
VPP = 5.0±0.5 V
MIN. TYP.(NOTE 1) MAX.
8.2 9.3 TBD
0.5 0.5 TBD
1 1.2 TBD
11.2 13.3 TBD
1 1.2 TBD
6.6 9.3
12.3 17.2
VPP = 12.0±0.6 V
MIN. TYP.(NOTE 1) MAX. UNIT
6.7 7.6 TBD µs
0.4 0.5 TBD s
0.8 1.1 TBD s
9.7 11.6 TBD µs
0.8 1.1 TBD s
7.4 10.4 µs
12.3 17.2 µs
• VCC = 5.0±0.25 V, 5.0±0.5 V, TA = 0 to +70˚C or –40 to +85˚C
SYMBOL
PARAMETER
VPP = 5.0±0.5 V
VPP = 12.0±0.6 V
NOTE MIN. TYP.(NOTE 1) MAX. MIN. TYP.(NOTE 1) MAX. UNIT
tWHQV1
Byte Write Time
tEHQV1
2 6.5 8 TBD 4.8 6 TBD µs
Block Write Time
2 0.4 0.5 TBD 0.3 0.4 TBD s
tWHQV2
Block Erase Time
tEHQV2
2 0.9 1.1 TBD 0.3 1.0 TBD s
tWHQV3
Set Lock-Bit Time
tEHQV3
2 9.5 12 TBD 7.8 10 TBD µs
tWHQV4
Clear Block Lock-Bits Time
tEHQV4
2 0.9 1.1 TBD 0.3 1.0 TBD s
tWHRH1
Byte Write Suspend Latency Time to Read
tEHRH1
5.6 7
5.2 7.5 µs
tWHRH2
Erase Suspend Latency Time to Read
tEHRH2
9.4 13.1
9.8 12.6 µs
NOTES :
1. Typical values measured at TA = +25˚C and nominal
voltages. Assumes corresponding lock-bits are not set.
Subject to change based on device characterization.
3. These performance numbers are valid for all speed
versions.
4. Sampled, not 100% tested.
2. Excludes system-level overhead.
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